c-633 IRGP430UD2 i nsulated gate bipolar transistor with ultrafast soft recovery diode features ? switching-loss rating includes all "tail" losses ? hexfred tm soft ultrafast diodes ? optimized for high operating frequency (over 5khz) see fig. 1 for current vs. frequency curve e g n - c h a n n e l c v ces = 500v v ce(sat) 3.0v @v ge = 15v, i c = 15a parameter min. typ. max. units r q jc junction-to-case - igbt ? ? 1.2 r q jc junction-to-case - diode ? ? 2.5 c/w r q cs case-to-sink, flat, greased surface ? 0.24 ? r q ja junction-to-ambient, typical socket mount ? ? 40 wt weight ? 6 (0.21) ? g (oz) thermal resistance description co-packaged igbts are a natural extension of international rectifier's well known igbt line. they provide the convenience of an igbt and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, ups and power supply applications. t o - 2 4 7 a c ultrafast copack igbt pd - 9.1063 parameter max. units v ces collector-to-emitter voltage 500 v i c @ t c = 25c continuous collector current 25 i c @ t c = 100c continuous collector current 15 i cm pulsed collector current 50 a i lm clamped inductive load current 50 i f @ t c = 100c diode continuous forward current 12 i fm diode maximum forward current 50 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 100 w p d @ t c = 100c maximum power dissipation 42 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1 n?m) absolute maximum ratings revision 1
c-634 parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 31 47 i c = 15a q ge gate - emitter charge (turn-on) ? 6.2 9.2 nc v cc = 400v q gc gate - collector charge (turn-on) ? 12 19 see fig. 8 t d(on) turn-on delay time ? 73 ? t j = 25c t r rise time ? 72 ? ns i c = 15a, v cc = 400v t d(off) turn-off delay time ? 120 180 v ge = 15v, r g = 23 w t f fall time ? 100 150 energy losses include "tail" and e on turn-on switching loss ? 0.7 ? diode reverse recovery. e off turn-off switching loss ? 0.4 ? mj see fig. 9, 10, 11, 18 e ts total switching loss ? 1.1 1.7 t d(on) turn-on delay time ? 77 ? t j = 150c, see fig. 9, 10, 11, 18 t r rise time ? 75 ? ns i c = 15a, v cc = 400v t d(off) turn-off delay time ? 200 ? v ge = 15v, r g = 23 w t f fall time ? 190 ? energy losses include "tail" and e ts total switching loss ? 1.5 ? mj diode reverse recovery. l e internal emitter inductance ? 13 ? nh measured 5mm from package c ies input capacitance ? 660 ? v ge = 0v c oes output capacitance ? 110 ? pf v cc = 30v see fig. 7 c res reverse transfer capacitance ? 12 ? ? = 1.0mhz t rr diode reverse recovery time ? 42 60 ns t j = 25c see fig. ? 80 120 t j = 125c 14 i f = 12a i rr diode peak reverse recovery current ? 3.5 6.0 a t j = 25c see fig. ? 5.6 10 t j = 125c 15 v r = 200v q rr diode reverse recovery charge ? 80 180 nc t j = 25c see fig. ? 220 600 t j = 125c 16 di/dt = 200a/s di (rec)m /dt diode peak rate of fall of recovery ? 180 ? a/s t j = 25c see fig. during t b ? 116 ? t j = 125c 17 parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 500 ? ? v v ge = 0v, i c = 250a d v (br)ces / d t j temp. coeff. of breakdown voltage ? 0.46 ? v/c v ge = 0v , i c = 1.0ma v ce(on) collector-to-emitter saturation voltage ? 2.3 3.0 i c = 15a v ge = 15v ? 2.8 ? v i c = 25a see fig. 2, 5 ? 2.6 ? i c = 15a, t j = 150c v ge(th) gate threshold voltage 3.0 ? 5.5 v ce = v ge , i c = 250a d v ge(th) / d t j temp. coeff. of threshold voltage ? -11 ? mv/c v ce = v ge , i c = 250a g fe forward transconductance 2.3 8.1 ? s v ce = 100v, i c = 15a i ces zero gate voltage collector current ? ? 250 a v ge = 0v, v ce = 500v ? ? 2500 v ge = 0v, v ce = 500v, t j = 150c v fm diode forward voltage drop ? 1.4 1.7 v i c = 12a see fig. 13 ? 1.3 1.6 i c = 12a, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v IRGP430UD2 pulse width 80s; duty factor 0.1%. v cc =80%(v ces ), v ge =20v, l=10h, r g = 23 w , ( see fig. 19 ) pulse width 5.0s, single shot. switching characteristics @ t j = 25c (unless otherwise specified) electrical characteristics @ t j = 25c (unless otherwise specified) repetitive rating; v ge =20v, pulse width limited by max. junction temperature. ( see fig. 20 ) notes:
c-635 fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics IRGP430UD2 0 4 8 12 16 20 0.1 1 10 100 f , f r e q u e n c y ( k h z ) l o a d c u r r e n t ( a ) a 6 0 % o f r a t e d v o l t a g e d u t y c y c l e : 5 0 % t = 1 2 5 c t = 9 0 c g a t e d r i v e a s s p e c i f i e d t u r n - o n l o s s e s i n c l u d e e f f e c t s o f r e v e r s e r e c o v e r y s i n k j p o w e r d i s s i p a t i o n = 2 4 w 1 1 0 1 0 0 1 1 0 c e c i , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) v , c o l l e c t o r - t o - e m i t t e r v o l t a g e ( v ) t = 1 5 0 c t = 2 5 c j j v = 1 5 v 2 0 s p u l s e w i d t h ? g e 0 . 1 1 1 0 1 0 0 1 0 0 0 5 1 0 1 5 2 0 c i , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) v , g a t e - t o - e m i t t e r v o l t a g e ( v ) g e t = 2 5 c t = 1 5 0 c j j v = 1 0 0 v 5 s p u l s e w i d t h ? c c
c-636 fig. 5 - collector-to-emitter voltage vs. case temperature fig. 4 - maximum collector current vs. case temperature IRGP430UD2 fig. 6 - maximum igbt effective transient thermal impedance, junction-to-case 0 5 1 0 1 5 2 0 2 5 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 m a x i m u m d c c o l l e c t o r c u r r e n t ( a ) t , c a s e t e m p e r a t u r e ( c ) c v = 1 5 v ? g e 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 3 . 5 4 . 0 4 . 5 - 6 0 - 4 0 - 2 0 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0 t , c a s e t e m p e r a t u r e ( c ) c c e v , c o l l e c t o r - t o - e m i t t e r v o l t a g e ( v ) ? v = 1 5 v ? 8 0 s p u l s e w i d t h g e i = 3 0 a i = 1 5 a i = 7 . 5 a c c c 0 . 0 1 0 . 1 1 1 0 0 . 0 0 0 0 1 0 . 0 0 0 1 0 . 0 0 1 0 . 0 1 0 . 1 1 1 0 t , r e c t a n g u l a r p u l s e d u r a t i o n ( s e c ) 1 t h j c d = 0 . 5 0 0 . 0 1 0 . 0 2 0 . 0 5 0 . 1 0 0 . 2 0 s i n g l e p u l s e ( t h e r m a l r e s p o n s e ) t h e r m a l r e s p o n s e ( z ) p t 2 1 t d m n o t e s : ? 1 . d u t y f a c t o r d = t / t 2 . p e a k t = p x z + t ? ? ? ? 1 2 j d m t h j c c ? ? ?
c-637 IRGP430UD2 fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. case temperature 1.03 1.06 1.09 1.12 1.15 0 10 20 30 40 50 60 g t o t a l s w i t c h i n g l o s s e s ( m j ) r , g a t e r e s i s t a n c e ( w ) a ? v = 4 0 0 v ? v = 1 5 v ? t = 2 5 c ? i = 1 5 a c c g e c c 0.1 1 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 c t , c a s e t e m p e r a t u r e ( c ) t o t a l s w i t c h i n g l o s s e s ( m j ) a r = 2 3 w v = 1 5 v v = 4 0 0 v g g e c c i = 3 0 a i = 1 5 a c c i = 7 . 5 a c 0 2 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0 1 2 0 0 1 4 0 0 1 1 0 1 0 0 c e c , c a p a c i t a n c e ( p f ) v , c o l l e c t o r - t o - e m i t t e r v o l t a g e ( v ) v = 0 v , f = 1 m h z c = c + c , c s h o r t e d c = c c = c + c g e i e s g e g c c e r e s g c o e s c e g c c ? i e s c ? r e s c ? o e s 0 4 8 1 2 1 6 2 0 0 1 0 2 0 3 0 4 0 g e v , g a t e - t o - e m i t t e r v o l t a g e ( v ) q , t o t a l g a t e c h a r g e ( n c ) g ? v = 4 0 0 v ? i = 1 5 a c e c
c-638 fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa fig. 13 - maximum forward voltage drop vs. instantaneous forward current IRGP430UD2 0.0 1.0 2.0 3.0 4.0 5.0 0 10 20 30 40 c t o t a l s w i t c h i n g l o s s e s ( m j ) i , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) a ? r = 2 3 w ? t = 1 5 0 c ? v = 4 0 0 v ? v ? = 1 5 v g c c c g e 1 10 100 1 10 100 1000 c c e i , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) s a f e o p e r a t i n g a r e a ? ? v = 2 0 v ? t = 1 2 5 c g e j v , c o l l e c t o r - t o - e m i t t e r v o l t a g e ( v ) a 1 10 100 0.4 0.8 1.2 1.6 2.0 2.4 f m f i n s t a n t a n e o u s f o r w a r d c u r r e n t - i ( a ) f o r w a r d v o l t a g e d r o p - v ( v ) t = 1 5 0 c t = 1 2 5 c t = 2 5 c j j j
c-639 fig. 14 - typical reverse recovery vs. di f /dt fig. 15 - typical recovery current vs. di f /dt fig. 16 - typical stored charge vs. di f /dt fig. 17 - typical di (rec)m /dt vs. di f /dt IRGP430UD2 10 100 1000 10000 100 1000 f d i / d t - ( a / s ) d i ( r e c ) m / d t - ( a / s ) i = 1 2 a i = 2 4 a i = 6 . 0 a f f f v = 2 0 0 v t = 1 2 5 c t = 2 5 c r j j 0 40 80 120 160 100 1000 f d i / d t - ( a / s ) t - ( n s ) r r i = 2 4 a i = 1 2 a i = 6 . 0 a f f f v = 2 0 0 v t = 1 2 5 c t = 2 5 c r j j 1 10 100 100 1000 f d i / d t - ( a / s ) i - ( a ) i r r m i = 6 . 0 a i = 1 2 a i = 2 4 a f f f v = 2 0 0 v t = 1 2 5 c t = 2 5 c r j j 0 200 400 600 100 1000 f d i / d t - ( a / s ) r r q - ( n c ) i = 6 . 0 a i = 1 2 a i = 2 4 a v = 2 0 0 v t = 1 2 5 c t = 2 5 c r j j f f f
c-640 IRGP430UD2 t 1 i c v c e t 1 t 2 9 0 % i c 1 0 % v c e t d ( o f f ) t f i c 5 % i c t 1 + 5 s v c e i c d t 9 0 % v g e + v g e e o f f = fig. 18b - test waveforms for circuit of fig. 18a, defining e off , t d(off) , t f s a m e t y p e d e v i c e a s d . u . t . d . u . t . 4 3 0 f 8 0 % o f v c e fig. 18a - test circuit for measurement of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f v c e i e d t t 2 t 1 5 % v c e i c i p k v c c 1 0 % i c v c e t 1 t 2 d u t v o l t a g e a n d c u r r e n t g a t e v o l t a g e d . u . t . + v g 1 0 % + v g 9 0 % i c t r t d ( o n ) d i o d e r e v e r s e r e c o v e r y e n e r g y t x e o n = e r e c = t 4 t 3 v d i d d t t 4 t 3 d i o d e r e c o v e r y w a v e f o r m s i c v p k 1 0 % v c c i r r 1 0 % i r r v c c t r r q r r = t r r t x i d d t fig. 18c - test waveforms for circuit of fig. 18a, defining e on , t d(on) , t r fig. 18d - test waveforms for circuit of fig. 18a, defining e rec , t rr , q rr , i rr refer to section d for the following: appendix b: section d - page d-4 fig. 18e - macro waveforms for test circuit fig. 18a fig. 19 - clamped inductive load test circuit fig. 20 - pulsed collector current test circuit package outline 3 - jedec outline to-247ac section d - page d-13
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